AP9578GJ-HF

更新时间： 2024-10-28 13:05:35

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富鼎先进 - A-POWER		晶体晶体管功率场效应晶体管开关脉冲
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数据手册

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AP9578GJ-HF 数据手册

AP9578GH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower On-resistance

BV_DSS

R_DS(ON)

I_D

-60V

160mΩ

-10A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

Description

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9578GJ) is

available for low-profile applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-60

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+25

-10

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-6

-45

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.23

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

4.5

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

200901153

12 3 4 5 6

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