生命周期: | Contact Manufacturer | 零件包装代码: | TO-251 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.65 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.012 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 120 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP60T03AP | A-POWER |
获取价格 |
TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, F | |
AP60T03AS | A-POWER |
获取价格 |
Simple Drive Requirement Low Gate Charge | |
AP60T03GH | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP60T03GH/J | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP60T03GH-HF | A-POWER |
获取价格 |
TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND R | |
AP60T03GI | A-POWER |
获取价格 |
Simple Drive Requirement Low Gate Charge | |
AP60T03GI-HF | A-POWER |
获取价格 |
暂无描述 | |
AP60T03GJ | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP60T03GJ-HF | A-POWER |
获取价格 |
TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND R | |
AP60T03GP | A-POWER |
获取价格 |
Simple Drive Requirement, Low Gate Charge |