Datasheet > AP60T10GP-HF_14

AP60T10GP-HF_14

更新时间： 2024-11-19 01:18:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	102K
描述
Simple Drive Requirement

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数据手册

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AP60T10GP-HF_14 数据手册

AP60T10GS/P-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

18mΩ

67A

▼ Lower On-resistance

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-220(P)

TO-263(S)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP60T10GP)

are available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

100

+20

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

250

167

288

P_D@T_C=25℃

Total Power Dissipation

℃

E_AS

T_STG

T_J

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

Maixmum Thermal Resistance, Junction-ambient

0.75

Rthj-a

Data and specifications subject to change without notice

201011024

12 3 4

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