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AP60T10GS-HF PDF预览

AP60T10GS-HF

更新时间: 2024-11-18 13:05:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
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4页 64K
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AP60T10GS-HF 数据手册

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AP60T10GI-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
18mΩ  
34A  
Lower On-resistance  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS@10V  
Continuous Drain Current, VGS@10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
34  
A
22  
A
120  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
44.6  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
2.8  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
201002121  

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