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AP60T06GJ-HF PDF预览

AP60T06GJ-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体开关晶体管功率场效应晶体管脉冲驱动
页数 文件大小 规格书
4页 99K
描述
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic

AP60T06GJ-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.72
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):46 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP60T06GJ-HF 数据手册

 浏览型号AP60T06GJ-HF的Datasheet PDF文件第2页浏览型号AP60T06GJ-HF的Datasheet PDF文件第3页浏览型号AP60T06GJ-HF的Datasheet PDF文件第4页 
AP60T06GJ-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
55V  
12mΩ  
46A  
Lower On-resistance  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
G
D
TO-251(J)  
S
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-251 package is widely preferred for all commercial-industrial  
through-hole applications and suited for low voltage applications such  
as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
55  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
46  
A
29  
A
160  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
44.6  
W
W
Total Power Dissipation  
1.13  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.8  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
201102151  

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