AP60T03GI-HF

更新时间： 2024-11-18 13:05:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
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4页	80K
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AP60T03GI-HF 数据手册

AP60T03AH/J

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

12mΩ

45A

▼ Low Gate Charge

▼ Fast Switching

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-252(H)

TO-251(J)

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP60T03AJ) are available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

120

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.352

-55 to 175

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

3.4

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Data and specifications subject to change without notice

200909033

12 3 4

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