AP4525GEM

更新时间： 2024-11-18 04:06:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	118K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4525GEM 数据手册

AP4525GEM

Pb Free Plating Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

40V

28mΩ

▼ Low On-resistance

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant

I_D

P-CH BV_DSS

R_DS(ON)

-40V

42mΩ

-5A

SO-8

Description

I_D

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design,low on-resistance and cost-

effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-40

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±16

6.0

5.0

±16

-5.0

-4.0

-30

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

2.0

W/℃

℃

0.016

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200725064-1/7

12 3 4 5 6 7

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