AP4525GEM-HF

更新时间： 2024-02-26 23:22:08

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
7页	130K
描述
Simple Drive Requirement, Low On-resistance

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中文翻译

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技术参数
数据手册

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AP4525GEM-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.66	Is Samacsys：	N
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

AP4525GEM-HF 数据手册

AP4525GEM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

40V

28mΩ

▼ Low On-resistance

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant

I_D

P-CH BV_DSS

R_DS(ON)

-40V

42mΩ

-5A

SO-8

Description

I_D

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design,low on-resistance and cost-

effectiveness.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-40

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+16

6.0

5.0

+16

-5.0

-4.0

-30

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

2.0

W/℃

℃

0.016

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200901155

12 3 4 5 6 7

中文翻译

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