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AP4543GEH-HF PDF预览

AP4543GEH-HF

更新时间: 2024-09-28 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲驱动
页数 文件大小 规格书
7页 183K
描述
Simple Drive Requirement, Good Thermal Performance

AP4543GEH-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G4针数:5
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.7外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏源导通电阻:0.024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP4543GEH-HF 数据手册

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AP4543GEH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
40V  
24mΩ  
8.7A  
D1/D2  
Good Thermal Performance  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
RDS(ON)  
ID  
P-CH BVDSS  
RDS(ON)  
S1  
-40V  
40m  
-7A  
G1  
S2  
G2  
Description  
ID  
TO-252-4L  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D1  
D2  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-40  
VDS  
VGS  
Drain-Source Voltage  
40  
+20  
8.7  
7.0  
30  
V
V
Gate-Source Voltage  
+20  
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-7.0  
A
-5.6  
A
-30  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.13  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
6
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
Rthj-a  
40  
Data and specifications subject to change without notice  
1
200909042  

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