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AP4528GM PDF预览

AP4528GM

更新时间: 2024-02-24 09:46:36
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管驱动
页数 文件大小 规格书
8页 211K
描述
Simple Drive Requirement, Fast Switching Performance

AP4528GM 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):5.8 A
最大漏源导通电阻:0.036 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP4528GM 数据手册

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AP4528GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
40V  
36mΩ  
5.8A  
D2  
D2  
Fast Switching Performance  
Lower Gate Charge  
RDS(ON)  
D1  
D1  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
G1  
-40V  
S1  
SO-8  
60mΩ  
-4.5A  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the designer  
with the best combination of fast switching, ruggedized device  
design, low on-resistance and cost-effectiveness.  
D1  
D2  
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
G2  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
N-channel  
P-channel  
-40  
VDS  
VGS  
Drain-Source Voltage  
40  
±20  
5.8  
4.6  
20  
Gate-Source Voltage  
±20  
V
A
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-4.5  
-3.6  
A
-20  
A
PD@TA=25℃  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
200914071-1/7  

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