是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G4 |
针数: | 5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.71 | 外壳连接: | DRAIN |
配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 9.6 A | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G4 |
元件数量: | 2 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 40 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP4563GH | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4563GH_11 | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance | |
AP4563GH-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance | |
AP4563GM | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4565GM | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4565M | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4569GD | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4569GH | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4569GM | A-POWER |
获取价格 |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4575GH-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Good Thermal Performance |