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AP10N011LH PDF预览

AP10N011LH

更新时间: 2024-09-16 17:15:31
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 109K
描述
TO-252

AP10N011LH 数据手册

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AP10N011LH  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
100V  
11mΩ  
48.4A  
D
S
Simple Drive Requirement  
Lower On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
G
D
S
AP10N011seriesarefromAdvancedPowerinnovateddesign and silicon  
processtechnology toachieve thelowestpossibleon-resistance and fast  
switchingperformance.It providesthedesigner withanextreme efficient  
deviceforuse inawiderangeofpowerapplications.
TO-252(H)  
TO-252 packageiswidelypreferredforallcommercial-industrial surface  
mountapplications using infraredreflow technique andsuited for high  
currentapplicationduetothe lowconnectionresistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
48.4  
A
30.6  
A
160  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
50  
W
W
Total Power Dissipation3  
Storage Temperature Range  
Operating Junction Temperature Range  
2
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
2.5  
Rthj-a  
62.5  
1
202010152