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AP10NA011J PDF预览

AP10NA011J

更新时间: 2024-10-31 17:15:15
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 251K
描述
TO-251

AP10NA011J 数据手册

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AP10NA011J  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
100V  
11mΩ  
48.5A  
Simple Drive Requirement  
Low On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP10NA011series are fromAdvancedPowerinnovated
designandsiliconprocesstechnologytoachievethelowest  
possibleon-resistanceandfastswitchingperformance.It  
providesthedesignerwith anextremeefficient device foruse  
inawiderangeof powerapplications.  
G
D
S
TO-251(J)  
ThestraightleadversionTO-251packageiswidelypreferred  
forallcommercial-industrialthrough holeapplications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
48.5  
A
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
30.6  
A
160  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
50  
W
W
mJ  
Total Power Dissipation  
1.13  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
24.5  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.5  
Rthj-a  
110  
1
202103231