AP10NA011J
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
ID
100V
11mΩ
48.5A
▼ Simple Drive Requirement
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
Description
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G
D
S
TO-251(J)
The TO-220 package is widely preferred for all commercial-
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package.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
48.5
A
Drain Current, VGS @ 10V
Pulsed Drain Current1
30.6
A
160
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
50
W
W
mJ
℃
℃
Total Power Dissipation
1.13
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
24.5
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
2.5
Rthj-a
110
1
202103231