AP10NA011LH
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
ID
100V
11mΩ
48.4A
D
S
▼ Simple Drive Requirement
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
Description
G
D
S
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range of power applications.
TO-252(H)
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popular package.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
48.4
A
30.6
A
160
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
50
W
W
℃
℃
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
2.5
Rthj-a
62.5
1
202111011