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AP10N2R5S6 PDF预览

AP10N2R5S6

更新时间: 2024-11-02 17:15:55
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 74K
描述
TO-263-6L

AP10N2R5S6 数据手册

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AP10N2R5S6  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
100V  
Simple Drive Requirement  
RDS(ON)  
2.5mΩ  
Ultra Low On-resistance  
G
RoHS Compliant & Halogen-Free  
D
Description  
D
G
AP10N2R5seriesarefromAdvancedPowerinnovated design  
and silicon process technology to achieve the lowest possible  
on-resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide  
range of power applications.  
S
S
S
S
TO-263-6L  
S
The TO-263 package is widely preferred for all commercial-  
industrial surfacemount applicationsusinginfraredreflow
techniqueandsuitedforhighcurrentapplicationduetothe  
lowconnectionresistance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
215  
A
138  
A
480  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
227  
W
W
mJ  
3.12  
320  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
0.55  
40  
Rthj-a  
1
202003041  

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