5秒后页面跳转
AP10N70I-A-HF PDF预览

AP10N70I-A-HF

更新时间: 2024-09-15 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 65K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP10N70I-A-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.75
雪崩能效等级(Eas):50 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.62 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):40 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP10N70I-A-HF 数据手册

 浏览型号AP10N70I-A-HF的Datasheet PDF文件第2页浏览型号AP10N70I-A-HF的Datasheet PDF文件第3页浏览型号AP10N70I-A-HF的Datasheet PDF文件第4页 
AP10N70I-A-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Avalanche Test  
BVDSS  
RDS(ON)  
ID  
650V  
0.62Ω  
10A  
D
S
Fast Switching Characteristic  
Simple Drive Requirement  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for commercial-  
industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
650  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 30  
V
ID@TC=25  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
10  
A
ID@TC=100℃  
6.8  
A
IDM  
40  
A
PD@TC=25℃  
Total Power Dissipation  
31.3  
W
mJ  
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy2  
Storage Temperature Range  
Operating Junction Temperature Range  
50  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4
Rthj-a  
65  
Data & specifications subject to change without notice  
1
201204201  

与AP10N70I-A-HF相关器件

型号 品牌 获取价格 描述 数据表
AP10N70P A-POWER

获取价格

TRANSISTOR 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, T
AP10N70P_07 A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP10N70P-A A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP10N70R A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP10N70R-A A-POWER

获取价格

TRANSISTOR 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, T
AP10N70S A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP10N70W A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP10N7R5H A-POWER

获取价格

TO-252
AP10N8R8I A-POWER

获取价格

TO-220CFM
AP10NA011H A-POWER

获取价格

TO-252