Datasheet > AP10N70P_07

AP10N70P_07

更新时间： 2024-09-15 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	195K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP10N70P_07 数据手册

AP10N70R/P

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% Avalanche Test

BV_DSS

R_DS(ON)

I_D

600V

0.6Ω

10A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

Description

AP10N70 series are specially designed as main switching devices for

universal 90~265VAC off-line AC/DC converter applications.Both TO-220

and TO-262 type provide high blocking voltage to overcome voltage surge

and sag in the toughest power system with the best combination of fast

switching,ruggedized design and cost-effectiveness.

TO-262(R)

TO-220(P)

The TO-220 and TO-262 package is widely preferred for commercial-

industrial applications. The device is suited for switch mode power supplies,

DC-AC converters and high current high speed switching circuits.

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

± 30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

6.3

P_D@T_C=25℃

Total Power Dissipation

174

1.39

Linear Derating Factor

Single Pulse Avalanche Energy²

W/℃

E_AS

I_AR

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

0.72

Rthj-a

Data & specifications subject to change without notice

201022073-1/4

12 3 4 5 6

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