Datasheet > AP10N012I

AP10N012I

更新时间： 2024-11-05 17:15:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	110K
描述
TO-220CFM

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AP10N012I 数据手册

AP10N012I

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

100V

12.5mΩ

35.4A

▼ Simple Drive Requirement

▼ Lower On-resistance

▼ RoHS Compliant & Halogen-Free

Description

AP41600N401s2ersiersieasrearefrofrmomAAddvavannceceddPPoowweerriinnnnoovvaatteedd design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

TO-220CFM(I)

The TO-220 package is widely preferred for all commercial-

iTnhdeustrTiaOl-22th0rCouFgMh phaoclekageappilsicatwioindse.ly Tphreeferlroewd tfhoerrmaall

rceosmismtaenrcceiala-indulsotwriaplatchkraogueghcohsotleconatprpibliuctaetiotonst.he Twhoerldmwoidlde

pcompuplaorunpdacpkraogveid.es a high isolation voltage capability and low

thermal resistance between the tab and the external heat-sink.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

35.4

22.4

160

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

28.4

℃

Total Power Dissipation

1.92

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

128

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

4.4

Rthj-a

201710171

12 3 4 5 6

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