Datasheet > AO4852

AO4852

更新时间： 2024-11-19 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	734K
描述
SOP-8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO4852 数据手册

AO4852

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 V_DS=60V,I_D=3.5A,R_DS(ON)≤90mΩ@V_GS=10V

 Low on-resistance and low gate charge

 For synchronous rectifier applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

10Sec

Steady state

Unit

VDS

±20

V_GS

T_A= 25°C

T_A= 70°C

3.5

2.8

2.4

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.3

1.4

0.9

Power dissipation

Avalanche Current

I_AR

E_AR

9.6

150

Repetitive avalanche energy 0.3mH

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

°C/W

°C

R_θ

T_J

T_STG

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

μA V_DS=60V,

Conditions

VGS=0V, ID=250μA

VGS=0V

V_DS=0V,

VGS=±20V

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

I_DSS

I_GSS

±100

2.6

1.7

2.3

V_GS(th)

VDS=VGS, ID=250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

VGS=10V

146

0.8

159

105

VGS=10V, ID=3A,

VGS=10V, ID=3A, T

VGS=4.5V, ID=2A

VDS=5V, I^D=3A

IS=1A, VGS=0V

mΩ

Drain-source on-resistance

R_DS(ON)*

^J=125°C

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

2.5

450

372

1.7

3.6

7.1

V_{DS=30V, VGS=0V, f=1MHz}

2.6

9.2

V_{DS=0V, VGS=0V, f=1MHz}

V^GS=4.5V,V^DS=30V,I^D=3A

Total gate charge

Q_g

VGS=10V,VDS=30V,ID=3A

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

4.1

2.1

23.4

23.2

5.3

VGS=10V, VDS=30V,

RGEN=3Ω,RL=10Ω

t_rr

Q_rr

I =3A, dI/dt=100A/μ s

nC I^F=3A, dI/dt=100A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

1 / 5

E-mail:hkt@heketai.com

12 3 4 5

中文翻译

下载PDF

与AO4852相关器件

型号	品牌	获取价格	描述	数据表
AO4852 (KO4852)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4854	FREESCALE	获取价格	30V Dual N-Channel MOSFET
AO4854	AOS	获取价格	30V Dual N-channel MOSFET
AO4854	HOTTECH	获取价格	SOP-8
AO4854 (KO4854)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4854L	FREESCALE	获取价格	Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability
AO4862 (KO4862)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4880	KEXIN	获取价格	N-Channel MOSFET
AO4882	AOS	获取价格	40V Dual N-Channel MOSFET
AO4882	FREESCALE	获取价格	40V Dual N-Channel MOSFET

与AO4852相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

AO4852

AO4852 数据手册

与AO4852相关器件

与AO4852相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AO4852

AO4852 数据手册

与AO4852相关器件

与AO4852相关文章

您还可以找

您在本页遇到什么问题？