Datasheet > AO4854

AO4854

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
7页	881K
描述
SOP-8

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中文翻译

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数据手册

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AO4854 数据手册

AO4854

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 V_DS=30V,I_D=8A,R_DS(ON)≤19mΩ@V_GS=10V

 Low on-resistance and low gate charge

 For synchronous rectifier applications

 ESD Protected

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Maximum

Unit

VDS

±20

6.5

1.3

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

Power dissipation

Avalanche Current

I_AR,I_AS

E_AR,E_AS

Repetitive avalanche energy 0.3mH

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)DSS*

Min

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

±10

2.4

I_DSS

I_GSS

μA V_DS=30V,

VGS=0V

μA V_DS=0V,

VGS=±20V

VDS=VGS, ID=250μA

V_GS(th)

1.2

1.8

On-State Drain Current

I_D(ON)

V_DS=5V,

VGS=10V

15.5

18.5

20.5

VGS=10V, ID=8A

VGS=4.5V, ID=4A

VGS=4V, ID=4A

mΩ

Drain-source on-resistance

R_DS(ON)*

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

VDS=5V, I =8A

0.75

2.5

888

145

115

1.7

IS=1A, VGS=0V

600

0.5

740

110

1.1

7.5

2.5

V_{DS=15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

VGS=4.5V,VDS=15V,ID=8A

Total gate charge

Q_g

VGS=10V,VDS=15V,ID=8A

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=30V,

RGEN=3Ω,RL=1.8Ω

3.5

t_rr

Q_rr

I =8A, dI/dt=500A/μ s

nC IF=8A, dI/dt=500A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

1 / 7

E-mail:hkt@heketai.com

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与AO4854相关器件

型号	品牌	获取价格	描述	数据表
AO4854 (KO4854)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4854L	FREESCALE	获取价格	Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability
AO4862 (KO4862)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4880	KEXIN	获取价格	N-Channel MOSFET
AO4882	AOS	获取价格	40V Dual N-Channel MOSFET
AO4882	FREESCALE	获取价格	40V Dual N-Channel MOSFET
AO4882 (KO4882)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4884	AOS	获取价格	40V Dual N-Channel MOSFET
AO4884	FREESCALE	获取价格	40V Dual N-Channel MOSFET
AO4884	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°

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