Datasheet > AO4882

AO4882

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	349K
描述
40V Dual N-Channel MOSFET

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AO4882 数据手册

AO4882

40V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

40V

The AO4882 uses advanced trench technology to provide

excellent R_DS(ON)with low gate charge. This is an all

purpose device that is suitable for use in a wide range of

power conversion applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

< 19mΩ

< 27mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AS

Avalanche energy L=0.1mH ^C

E_AS

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 0 : Dec 2011

www.aosmd.com

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