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AO4854 PDF预览

AO4854

更新时间: 2024-10-30 12:51:27
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 206K
描述
30V Dual N-channel MOSFET

AO4854 数据手册

 浏览型号AO4854的Datasheet PDF文件第2页浏览型号AO4854的Datasheet PDF文件第3页浏览型号AO4854的Datasheet PDF文件第4页浏览型号AO4854的Datasheet PDF文件第5页浏览型号AO4854的Datasheet PDF文件第6页 
AO4854  
30V Dual N-channel MOSFET  
General Description  
Product Summary  
VDS  
30V  
The AO4854 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. The two MOSFETs  
make a compact and efficient switch and synchronous  
rectifier combination for use in DC-DC converters.  
ID (at VGS=10V)  
8A  
R
DS(ON) (at VGS=10V)  
<19m  
< 23mΩ  
< 26mΩ  
RDS(ON) (at VGS = 4.5V)  
RDS(ON) (at VGS = 4V)  
ESD Protected  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
D
Top View  
Bottom View  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G
G
S
S
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
8
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
6.5  
A
Pulsed Drain Current C  
IDM  
48  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
19  
A
Avalanche energy L=0.1mH C  
TA=25°C  
Power Dissipation B  
18  
2
mJ  
PD  
W
°C  
TA=70°C  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
48  
74  
32  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
RθJL  
40  
Rev3 : Nov 2010  
www.aosmd.com  
Page 1 of 6  

AO4854 替代型号

型号 品牌 替代类型 描述 数据表
AO4818B AOS

完全替代

30V Dual N-channel MOSFET
AO4822A AOS

类似代替

Dual N-Channel Enhancement Mode Field Effect Transistor

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种类:N+N-Channel;漏源电压(Vdss):40V;持续漏极电流(Id)(在25°