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AO4852 PDF预览

AO4852

更新时间: 2024-10-30 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
4页 408K
描述
60V Dual N-Channel MOSFET

AO4852 数据手册

 浏览型号AO4852的Datasheet PDF文件第2页浏览型号AO4852的Datasheet PDF文件第3页浏览型号AO4852的Datasheet PDF文件第4页 
AO4852  
60V Dual N-Channel MOSFET  
General Description  
The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. As a pair  
these MOSFETs operate very efficiently in Push Pull and Bridge topologies.  
Features  
VDS (V) = 60V  
ID = 3.5A  
(VGS = 10V)  
R
DS(ON) <90m(VGS = 10V)  
RDS(ON) <105m(VGS = 4.5V)  
SOIC-8  
D2  
D1  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G2  
G1  
S2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Maximum  
Parameter  
Symbol  
VDS  
10 Sec  
Steady State  
Units  
Drain-Source Voltage  
60  
V
Gate-Source Voltage  
VGS  
±20  
V
A
TA=25°C  
TA=70°C  
3.5  
2.8  
3
Continuous Drain  
Current A  
ID  
2.4  
Pulsed Drain Current B  
IDM  
20  
TA=25°C  
TA=70°C  
2
1.4  
0.9  
PD  
W
Power Dissipation  
Avalanche Current B  
1.3  
IAR  
8
A
mJ  
°C  
Repetitive avalanche energy 0.3mH B  
EAR  
9.6  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
62.5  
90  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Steady-State  
74  
Steady-State  
33  
40  
1/4  
www.freescale.net.cn  

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