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AO4498 PDF预览

AO4498

更新时间: 2024-11-30 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 389K
描述
30V N-Channel MOSFET

AO4498 数据手册

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AO4498  
30V N-Channel MOSFET  
General Description  
The AO4498 combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON)  
. This device is ideal for load switch and battery protection applications.  
Features  
VDS (V) = 30V  
ID = 18A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON) < 5.5m  
RDS(ON) < 7.5mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±20  
V
A
TC=25°C  
TC=70°C  
18  
Continuous Drain  
Current  
ID  
14  
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAR  
140  
42  
A
Repetitive avalanche energy L=0.1mH C  
EAR  
88  
3.1  
mJ  
TC=25°C  
Power Dissipation B  
TC=70°C  
PD  
W
°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
1/6  
www.freescale.net.cn  

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