AO4600L

更新时间： 2024-10-02 03:45:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	268K
描述
Complementary Enhancement Mode Field Effect Transistor

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AO4600L 数据手册

AO4600

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 30V

p-channel

-30V

The AO4600 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

Standard Product AO4600 is Pb-free (meets ROHS

& Sony 259 specifications). AO4600L is a Green

Product ordering option. AO4600 and AO4600L are

electrically identical.

I_D= 6.9A (V_GS= 10V) -5A (V_GS= -10V)

R_DS(ON)

< 27mΩ

< 32mΩ

< 50mΩ

< 49mΩ (V_GS=- 10V)

< 64mΩ (V_GS=- 4.5V)

< 120mΩ (V_GS= -2.5V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±12

-30

±12

V_GS

T_A=25°C

T_A=70°C

6.9

-5

I_D

5.8

-4.2

Pulsed Drain Current^B

I_DM

-30

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Typ

Max

62.5

110

Units

Maximum Junction-to-Ambient^A

°C/W

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient^A

Steady-State

Maximum Junction-to-Lead^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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