Datasheet > AO4566

AO4566

更新时间： 2024-10-02 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	343K
描述
30V N-Channel MOSFET

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AO4566 数据手册

AO4566

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low R_DS(ON)at 4.5V V_GS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

12A

< 11mΩ

< 17mΩ

Application

100% UIS Tested

100% R_gTested

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current^G

I_D

9.4

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

V_SPIKE

V_DSSpike

100ns

T_A=25°C

T_A=70°C

2.5

P_D

°C

Power Dissipation ^B

1.6

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 0: Aug 2012

www.aosmd.com

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