Datasheet > AO3419(KO3419)

AO3419(KO3419)

更新时间： 2024-11-22 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1709K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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AO3419(KO3419) 数据手册

SMD Type

MOSFIECT

P-Channel Enhancement MOSFET

AO3419 ^(KO3419)

SOT-23

Unit: mm

+0.1

2.9

-0.1

Features

VDS (V) = -20V

ID = -3.5 A

+0.1

-0.1

0.4

RDS(ON)

75m (VGS = -10V)

95m (VGS = -4.5V)

145m (VGS = -2.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

-20

Unit

Gate-Source Voltage

VGS

-3.5

Continuous Drain TA=25

-2.8

Current *1

TA=70

Pulsed Drain Current *2

IDM

-15

1.4

Power Dissipation *1 TA=25

TA=70

0.9

Thermal Resistance.Junction-to-Ambient

Thermal Resistance.Junction-to-Case

Junction and Storage Temperature Range

125

TJ, TSTG

-55 to 150

*1The value of R JA is measured with the device mounted on 1in ²FR-4 board with 2oz.

Copper, in a still air environment with TA =25

*2 Repetitive rating, pulse width limited by junction temperature.

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