Datasheet > AFT18H356-24SR6

AFT18H356-24SR6

更新时间： 2024-10-27 01:16:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
25页	873K
描述
N-Channel Enhancement-Mode Lateral MOSFET

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技术参数
数据手册

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AFT18H356-24SR6 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.74	Base Number Matches：	1

AFT18H356-24SR6 数据手册

Document Number: AFT18H356--24S

Rev. 1, 3/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 63 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of

1805 to 1995 MHz.

AFT18H356--24SR6

1800 MHz

1805–1995 MHz, 63 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty Single--Carrier W--CDMA Characterization Performance:

_DD= 28 Vdc, I_DQA= 1100 mA, V_GSB= 1.45 Vdc, P_out= 63 W Avg.,

Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

15.1

15.5

15.0

(%)

47.3

47.4

46.7

7.6

7.5

7.3

–33.2

–35.5

–38.5

–13

–12

1900 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 950 mA, V_GSB= 1.3 Vdc, P_out= 63 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

NI--1230S--4L2L



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1930 MHz

1960 MHz

1995 MHz

(dB)

15.3

15.5

15.4

(%)

48.4

48.1

47.8

7.6

7.5

7.4

–30.3

–30.6

–31.2

–18

–16

–12

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

Features

RF /V

inB GSB

RF /V

outB DSB



Advanced High Performance In--Package Doherty

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

Peaking

(1)

VBW

(Top View)



Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 3 and pin 6.

AFT18H356--24SR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...25

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与AFT18H356-24SR6相关器件

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