Datasheet > AFT18S260W31SR3

AFT18S260W31SR3

更新时间： 2024-10-26 20:49:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	679K
描述
AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 50 W AVG. 28 V

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AFT18S260W31SR3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.74	Base Number Matches：	1

AFT18S260W31SR3 数据手册

Document Number: AFT18S260W31S

Rev. 0, 4/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These 50 W RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 1805 to 1995 MHz.

AFT18S260W31SR3

AFT18S260W31GSR3

1800 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 1800 mA, P_out= 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.

1805–1995 MHz, 50 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS



Output PAR ACPR

IRL

(dB)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

18.4

19.3

19.6

(%)

27.2

28.0

29.3

(dB)

(dBc)

–35.2

–35.0

–34.0

7.1

–11

–24

–14

7.1

7.0

1900 MHz

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

NI--780S--2L2LA

AFT18S260W31SR3



I_DQ= 1800 mA, P_out= 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR ACPR

IRL

Frequency

1930 MHz

1960 MHz

1995 MHz

(dB)

19.0

19.3

19.6

(%)

25.1

25.6

26.6

(dB)

(dBc)

–34.2

–34.5

–33.9

(dB)

6.8

–20

–18

–12

NI--780GS--2L2LA

AFT18S260W31GSR3

6.9

6.8

Features



Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

Optimized for Doherty Applications

(1)

VBW



RF /V

in GS

RF /V

out DS

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device can operate with the V current

supplied through pin 2 or pin 4 alone.

AFT18S260W31SR3 AFT18S260W31GSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

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