Datasheet > AFT18S230-12NR3

AFT18S230-12NR3

更新时间： 2024-10-26 21:21:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	531K
描述
AIRFAST RF POWER LDMOS TRANSISTOR, 1805--1880 MHz, 50 W AVG., 28 V

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AFT18S230-12NR3 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

AFT18S230-12NR3 数据手册

Document Number: AFT18S230--12N

Rev. 0, 7/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 50 W RF power LDMOS transistor is designed for cellular base station

applications covering the frequency range of 1805 to 1880 MHz.

AFT18S230--12NR3

1800 MHz

1805–1880 MHz, 50 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 1400 mA, P_out= 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

17.1

17.5

17.6

(%)

33.3

33.8

7.1

6.9

–33.6

–33.7

–14

–16

–11

Features



High thermal conductivity packaging technology for reduced thermal

resistance

OM--780--2L2L

PLASTIC



Greater negative gate--source voltage range for improved Class C operation

Designed for digital predistortion error correction systems

Optimized for Doherty applications

(1)

VBW

RF /V

in GS

RF /V

out DS

(1)

VBW

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 2 and pin 4.

AFT18S230--12NR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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