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AFT18S230SR5 PDF预览

AFT18S230SR5

更新时间: 2024-10-26 20:38:07
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 459K
描述
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V

AFT18S230SR5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.66
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:40
Base Number Matches:1

AFT18S230SR5 数据手册

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Document Number: AFT18S230S  
Rev. 2, 3/2013  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
This 50 watt RF power LDMOS transistor is designed for cellular base station  
applications covering the frequency range of 1805 to 1880 MHz.  
AFT18S230SR3  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,  
IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%  
Probability on CCDF.  
1805--1880 MHz, 50 W AVG., 28 V  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
18.9  
19.1  
19.0  
(%)  
32.0  
32.0  
32.0  
7.2  
7.1  
6.8  
--35.0  
--35.0  
--34.0  
-- 1 9  
-- 1 8  
-- 11  
Features  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
NI--780S--6  
Designed for Digital Predistortion Error Correction Systems  
Optimized for Doherty Applications  
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.  
For R5 Tape and Reel option, see p. 12.  
1
2
6
5
N.C.  
VBW  
RF /V  
in GS  
RF /V  
out DS  
VBW  
3
4
N.C.  
(Top View)  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2012--2013. All rights reserved.  

AFT18S230SR5 替代型号

型号 品牌 替代类型 描述 数据表
AFT18S230SR3 NXP

完全替代

Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 50 W Avg., 28 V

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