Datasheet > AFT18P350-4S2LR6

AFT18P350-4S2LR6

更新时间： 2024-10-27 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	499K
描述
RF Power LDMOS Transistor

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AFT18P350-4S2LR6 数据手册

Document Number: AFT18P350--4S2L

Rev. 0, 4/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 63 watt symmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of

1805 to 1880 MHz.

AFT18P350--4S2LR6



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

I_DQA= 1000 mA, V_GSB= 1.2 Vdc, P_out= 63 Watts Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

1805--1880 MHz, 63 W AVG., 28 V

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

16.1

15.8

(%)

44.5

44.3

44.1

7.7

7.6

--29.8

--31.6

--33.0

Features



Production Tested in a Symmetrical Doherty Configuration

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

NI--1230--4LS2L

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with the V current supplied through pin 3 and pin 6.

AFT18P350--4S2LR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...13

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