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AFT18P350-4S2LR6 PDF预览

AFT18P350-4S2LR6

更新时间: 2024-10-27 01:18:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 499K
描述
RF Power LDMOS Transistor

AFT18P350-4S2LR6 数据手册

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Document Number: AFT18P350--4S2L  
Rev. 0, 4/2013  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
This 63 watt symmetrical Doherty RF power LDMOS transistor is designed  
for cellular base station applications covering the frequency range of  
1805 to 1880 MHz.  
AFT18P350--4S2LR6  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,  
IDQA = 1000 mA, VGSB = 1.2 Vdc, Pout = 63 Watts Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
1805--1880 MHz, 63 W AVG., 28 V  
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
16.1  
16.1  
15.8  
(%)  
44.5  
44.3  
44.1  
7.7  
7.7  
7.6  
--29.8  
--31.6  
--33.0  
Features  
Production Tested in a Symmetrical Doherty Configuration  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Designed for Digital Predistortion Error Correction Systems  
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.  
NI--1230--4LS2L  
(1)  
6
5
VBW  
A
Carrier  
RF /V  
1
2
RF /V  
outA DSA  
inA GSA  
RF /V  
inB GSB  
RF /V  
outB DSB  
4
3
Peaking  
(1)  
VBW  
B
(Top View)  
Figure 1. Pin Connections  
1. Device cannot operate with the V current supplied through pin 3 and pin 6.  
DD  
Freescale Semiconductor, Inc., 2013. All rights reserved.  

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