Datasheet > AFT18H357-24NR6

AFT18H357-24NR6

更新时间： 2024-10-26 20:50:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	518K
描述
AIRFAST RF POWER LDMOS TRANSISTOR, 1805-1880 MHz, 63 W AVG., 28 V

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AFT18H357-24NR6 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

AFT18H357-24NR6 数据手册

Document Number: AFT18H357--24N

Rev. 0, 5/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 63 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of 1805 to

1880 MHz.

AFT18H357--24NR6

1800 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 800 mA, V_GSB= 0.9 V, P_out= 63 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

1805–1880 MHz, 63 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

17.5

17.6

17.4

(%)

48.7

48.3

48.2

7.6

7.7

–37.5

–38.9

–38.5

Features



Advanced high performance in--package Doherty

High thermal conductivity packaging technology for reduced thermal

resistance



Greater negative gate--source voltage range for improved Class C operation

Designed for digital predistortion error correction systems

OM--1230--4L2L

PLASTIC

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(1)

VBW

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 3 and pin 6.

AFT18H357--24NR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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