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AFT18H357-24SR6 PDF预览

AFT18H357-24SR6

更新时间: 2024-10-26 20:43:51
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
24页 761K
描述
AIRFAST RF POWER LDMOS TRANSISTOR, 1805-1995 MHz, 63 W AVG., 28 V

AFT18H357-24SR6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.72
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:40
Base Number Matches:1

AFT18H357-24SR6 数据手册

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Document Number: AFT18H357--24S  
Rev. 0, 3/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed  
for cellular base station applications covering the frequency range of 1805 to  
1995 MHz.  
AFT18H357--24SR6  
1800 MHz  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 63 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
1805–1995 MHz, 63 W AVG., 28 V  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
(dB)  
17.3  
17.5  
17.4  
(%)  
50.3  
49.7  
50.3  
1805 MHz  
1840 MHz  
1880 MHz  
7.8  
7.9  
7.8  
--34.6  
--37.4  
--37.6  
1900 MHz  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
IDQA = 800 mA, VGSB = 0.4 Vdc, Pout = 63 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
NI--1230S--4L2L  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
1930 MHz  
1960 MHz  
1995 MHz  
(dB)  
17.0  
17.1  
17.0  
(%)  
49.1  
48.9  
49.1  
7.7  
7.6  
7.4  
--34.6  
--37.4  
--37.6  
(1)  
6
5
VBW  
A
Carrier  
RF /V  
1
2
RF /V  
outA DSA  
inA GSA  
Features  
Advanced High Performance In--Package Doherty  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Designed for Digital Predistortion Error Correction Systems  
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.  
RF /V  
inB GSB  
RF /V  
outB DSB  
4
3
Peaking  
(1)  
VBW  
B
(Top View)  
Figure 1. Pin Connections  
1. Device cannot operate with the V  
DD  
current supplied through pin 3 and pin 6.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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