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SI2315BDS-T1-E3 PDF预览

SI2315BDS-T1-E3

更新时间: 2024-02-18 03:14:17
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
9页 219K
描述
TRANSISTOR 3000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

SI2315BDS-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):2.8 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.77 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
Base Number Matches:1

SI2315BDS-T1-E3 数据手册

 浏览型号SI2315BDS-T1-E3的Datasheet PDF文件第2页浏览型号SI2315BDS-T1-E3的Datasheet PDF文件第3页浏览型号SI2315BDS-T1-E3的Datasheet PDF文件第4页浏览型号SI2315BDS-T1-E3的Datasheet PDF文件第5页浏览型号SI2315BDS-T1-E3的Datasheet PDF文件第6页浏览型号SI2315BDS-T1-E3的Datasheet PDF文件第7页 
Si2315BDS  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 3.85  
- 3.4  
TrenchFET® Power MOSFETs: 1.8 V Rated  
Pb-free  
0.050 at VGS = - 4.5 V  
0.065 at VGS = - 2.5 V  
0.100 at VGS = - 1.8V  
Available  
- 12  
RoHS*  
COMPLIANT  
- 2.7  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2315BDS *(M5)  
* Marking Code  
Ordering Information: Si2315BDS-T1  
Si2315BDS-T1-E3 (Lead (Pb)-free)  
Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 12  
8
V
VGS  
TA = 25 °C  
A = 70 °C  
- 3.85  
- 3.0  
- 3.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
- 2.45  
A
Pulsed Drain Currenta  
Continuous Source Current (Diode Conduction)a  
IDM  
IS  
- 12  
- 1.0  
1.19  
0.76  
- 0.62  
0.75  
TA = 25 °C  
TA = 70 °C  
Power Dissipationa  
PD  
W
0.48  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typ.  
85  
Max.  
105  
166  
75  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
130  
60  
°C/W  
RthJF  
Notes:  
a. Surface Mounted on FR4 board.  
b. t 5 s.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 72014  
S-80642-Rev. E, 24-Mar-08  
www.vishay.com  
1

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