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74LVC07ABQ-Q100 PDF预览

74LVC07ABQ-Q100

更新时间: 2024-09-16 19:54:03
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路
页数 文件大小 规格书
15页 204K
描述
NON-INVERT GATE

74LVC07ABQ-Q100 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:DHVQFN-14Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.61
系列:LVC/LCX/ZJESD-30 代码:R-PQCC-N14
长度:2.5 mm逻辑集成电路类型:BUFFER
湿度敏感等级:1功能数量:6
输入次数:1端子数量:14
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:HVQCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
传播延迟(tpd):6.5 ns筛选级别:AEC-Q100
座面最大高度:1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:1.5 mm
Base Number Matches:1

74LVC07ABQ-Q100 数据手册

 浏览型号74LVC07ABQ-Q100的Datasheet PDF文件第2页浏览型号74LVC07ABQ-Q100的Datasheet PDF文件第3页浏览型号74LVC07ABQ-Q100的Datasheet PDF文件第4页浏览型号74LVC07ABQ-Q100的Datasheet PDF文件第5页浏览型号74LVC07ABQ-Q100的Datasheet PDF文件第6页浏览型号74LVC07ABQ-Q100的Datasheet PDF文件第7页 
74LVC07A-Q100  
Hex buffer with open-drain outputs  
Rev. 1 — 1 October 2012  
Product data sheet  
1. General description  
The 74LVC07A-Q100 provides six non-inverting buffers. The outputs are open-drain and  
can be connected to other open-drain outputs to implement active-LOW wired-OR or  
active-HIGH wired-AND functions.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these  
devices as translators in mixed 3.3 V and 5 V applications.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
5 V tolerant inputs and outputs (open-drain) for interfacing with 5 V logic  
Wide supply voltage range from 1.2 V to 5.5 V  
CMOS low power consumption  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Complies with JEDEC standard:  
JESD8-7A (1.65 V to 1.95 V)  
JESD8-5A (2.3 V to 2.7 V)  
JESD8-C/JESD36 (2.7 V to 3.6 V)  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
 
 

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