是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | BGA, BGA100,10X10,20 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.69 |
Is Samacsys: | N | 最长访问时间: | 65 ns |
其他特性: | IT CAN ALSO OPERATE AT 2.5 TO 3 VOLT NOMINAL SUPPLY | I/O 类型: | COMMON |
JESD-30 代码: | S-PBGA-B100 | JESD-609代码: | e0 |
内存密度: | 65536 bit | 内存集成电路类型: | APPLICATION SPECIFIC SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 100 |
字数: | 4096 words | 字数代码: | 4000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 4KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA100,10X10,20 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 1.8/3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.000008 A | 子类别: | SRAMs |
最大压摆率: | 0.07 mA | 最大供电电压 (Vsup): | 1.9 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | BALL | 端子节距: | 0.5 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70P245L90BYGI | IDT |
获取价格 |
Dual-Port SRAM, 4KX16, 90ns, CMOS, PBGA100, 0.5 MM PITCH, GREEN, BGA-100 | |
70P245L90BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX16, 90ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100 | |
70P245L90BYI | IDT |
获取价格 |
Application Specific SRAM, 4KX16, 90ns, CMOS, PBGA100, 0.50 MM PITCH, BGA-100 | |
70P246L55BYGI | IDT |
获取价格 |
Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, B | |
70P246L55BYGI8 | IDT |
获取价格 |
SRAM | |
70P246L55BYI | IDT |
获取价格 |
SRAM | |
70P246L55BYI8 | IDT |
获取价格 |
SRAM | |
70P247L55BYGI | IDT |
获取价格 |
Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, B | |
70P247L55BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, B | |
70P247L55BYI | IDT |
获取价格 |
Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100 |