是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | BGA, BGA100,10X10,20 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.69 |
最长访问时间: | 90 ns | 其他特性: | IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL |
I/O 类型: | COMMON | JESD-30 代码: | S-PBGA-B100 |
JESD-609代码: | e0 | 内存密度: | 65536 bit |
内存集成电路类型: | APPLICATION SPECIFIC SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 100 | 字数: | 4096 words |
字数代码: | 4000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA100,10X10,20 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 225 | 电源: | 1.8/3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.000006 A |
子类别: | SRAMs | 最大压摆率: | 0.06 mA |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 0.5 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70P254L40BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 40ns, CMOS, PBGA81, 0.50 MM PITCH, GREEN, BGA-81 | |
70P254L40BYI | IDT |
获取价格 |
Application Specific SRAM, 8KX16, 40ns, CMOS, PBGA81, 0.50 MM PITCH, BGA-81 | |
70P254L55BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA81, 0.50 MM PITCH, GREEN, BGA-81 | |
70P254L55BYI | IDT |
获取价格 |
Application Specific SRAM, 8KX16, 55ns, CMOS, PBGA81, 0.50 MM PITCH, BGA-81 | |
70P255L65BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 65ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100 | |
70P255L65BYI | IDT |
获取价格 |
Application Specific SRAM, 8KX16, 65ns, CMOS, PBGA100, 0.50 MM PITCH, BGA-100 | |
70P255L90BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 90ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100 | |
70P255L90BYI | IDT |
获取价格 |
Application Specific SRAM, 8KX16, 90ns, CMOS, PBGA100, 0.50 MM PITCH, BGA-100 | |
70P256L55BYI8 | IDT |
获取价格 |
SRAM | |
70P257L55BYI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100 |