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70P244L40BYI PDF预览

70P244L40BYI

更新时间: 2024-02-18 03:43:46
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
14页 111K
描述
Application Specific SRAM, 4KX16, 40ns, CMOS, PBGA81, 0.50 MM PITCH, BGA-81

70P244L40BYI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:BGA, BGA81,9X9,20
Reach Compliance Code:not_compliant风险等级:5.71
最长访问时间:40 nsI/O 类型:COMMON
JESD-30 代码:S-PBGA-B81JESD-609代码:e0
内存密度:65536 bit内存集成电路类型:APPLICATION SPECIFIC SRAM
内存宽度:16功能数量:1
端口数量:2端子数量:81
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA81,9X9,20
封装形状:SQUARE封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:1.8 V认证状态:Not Qualified
最大待机电流:0.000006 A子类别:SRAMs
最大压摆率:0.04 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

70P244L40BYI 数据手册

 浏览型号70P244L40BYI的Datasheet PDF文件第7页浏览型号70P244L40BYI的Datasheet PDF文件第8页浏览型号70P244L40BYI的Datasheet PDF文件第9页浏览型号70P244L40BYI的Datasheet PDF文件第11页浏览型号70P244L40BYI的Datasheet PDF文件第12页浏览型号70P244L40BYI的Datasheet PDF文件第13页 
IDT70P264/254/244L  
Datasheet  
Low Power 1.8V 16K/8K/4K x 16 Dual-Port Static RAM  
Industrial Temperature Range  
AC Electrical Characteristics Over the  
Operating TemperatureandSupplyVoltage(3)  
70P264/254/244  
Ind'l Only  
40ns  
55ns  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
WRITE CYCLE  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
EW  
AW  
AS  
WP  
WR  
DW  
DH  
WZ  
OW  
Write Cycle Time  
40  
30  
30  
0
55  
45  
45  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Chip Enable to End-of-Write(2)  
Address Valid to End-of-Write  
Address Set-up Time(2)  
Write Pulse Width  
t
t
t
25  
0
40  
0
t
Write Recovery Time  
Data Valid to End-of-Write  
Data Hold Time(3)  
t
20  
30  
t
0
0
(1)  
____  
____  
t
Write Enable to Output in High-Z  
Output Active from End-of-Write(1,3)  
15  
25  
____  
____  
t
0
0
ns  
7148 tbl 12  
NOTES:  
1. This parameter is guaranteed by device characterization, but is not production tested.  
2. To access SRAM, CE = VIL, UB or LB = VIL.  
3. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over  
voltage and temperature, the actual tDH will always be smaller than the actual tOW.  
6.42  
10  

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