Datasheet > 5SMX12H1273

5SMX12H1273

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
ABB		双极性晶体管
页数	文件大小	规格书
5页	68K
描述
IGBT-Die

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数据手册

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5SMX12H1273 数据手册

V_CE

I_C

1200 V

50 A

IGBT-Die

5SMX 12H1273

Die size: 9.1 9.0 mm

Doc. No. 5SYA 1641-00 Apr 07

· Low loss, rugged SPT technology

· Smooth switching for good EMC

· Minimized gate charge, short delay times

· Optimized for paralleling

· Large bondable emitter area

Maximum rated values

Parameter

Symbol Conditions

min max Unit

Collector-emitter voltage

DC collector current

Peak collector current

Gate-emitter voltage

V_CES

I_C

1200

V_GE= 0 V, T_vj³ 25 °C

I_CM

Limited by T_vjmax

100

V_GES

-20

-40

V_CC= 900 V, V_CEM£ 1200 V

IGBT short circuit SOA

Junction temperature

t_psc

T_vj

µs

°C

V_GE£ 15 V, T_vj£ 125 °C

150

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5

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