Datasheet > 4N60ZL-TF1-T

4N60ZL-TF1-T

更新时间： 2024-09-26 01:03:39

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	202K
描述
N-CHANNEL POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4N60ZL-TF1-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

4N60Z-E

Power MOSFET

4A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N60Z-E is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.



FEATURES

* R_DS(ON)=2.5Ω @ V_GS=10V, I_D=2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness



SYMBOL



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Tube

Lead Free

Halogen Free

4N60ZG-TF1-T

4N60ZL-TF1-T

TO-220F1

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 6

QW-R502-A22. A

12 3 4 5 6

中文翻译

下载PDF

与4N60ZL-TF1-T相关器件

型号	品牌	获取价格	描述	数据表
4N60ZL-TF3-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60ZL-TMS-T	UTC	获取价格	Power Field-Effect Transistor,
4N65	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65	LGE	获取价格	场效应晶体管
4N65	UMW	获取价格	漏源电压（Vdss）:650V;持续漏极电流（Id）（在25°C时）:4A(Tc);栅极-
4N65	HOTTECH	获取价格	TO-252
4N65-C	UTC	获取价格	N-CH
4N65-E	UTC	获取价格	N-CH
4N65F	LGE	获取价格	场效应晶体管
4N65F	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:650V;持续漏极电流（Id）（在25°C