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4N65

更新时间: 2024-11-06 14:55:51
品牌 Logo 应用领域
鲁光 - LGE 晶体管场效应晶体管
页数 文件大小 规格书
5页 909K
描述
场效应晶体管

4N65 数据手册

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4 N 6 5  
4A,650V N-Channel Power Mosfet  
FEATURES  
RDS(ON) =2.5@ VGS = 10V  
Ultra low gate charge ( typical 15 nC )  
Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  
Fast switching capability  
Avalanche energy specified  
Improved dv/dt capability, high ruggedness  
TO-220AB  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
650  
Units  
VDSS  
Drain-Source voltage  
V
V
±30  
VGSS  
ID  
Gate -Source voltage  
4.0  
16  
A
Continuous Drain Current  
IDM  
A
Pulsed Drain Current  
EAS  
EAR  
Avalanche Energy  
Single Pulsed  
Repetitive  
260  
mJ  
10.6  
dv/dt  
PD  
Peak Diode Recovery dv/dt  
Power Dissipation  
4.5  
36  
V/ns  
W
RθJA  
Thermal resistance,Junction-to-Ambient  
Junction Temperature  
62.5  
/W  
TJ  
+150  
Operating and Storage Temperature  
TOPR, Tstg  
-55 to +150  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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