Datasheet > 4N65F

4N65F

更新时间： 2024-11-25 14:53:07

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
5页	839K
描述
场效应晶体管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4N65F 数据手册

4 N 6 5 F

4A,650V N-Channel Power Mosfet

FEATURES



R_DS(ON)=2.5Ω@ V_GS= 10V

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

650

Units

V_DSS

Drain-Source voltage

±30

V_GSS

Gate -Source voltage

I_D

Continuous Drain Current

4.0

I_DM

Pulsed Drain Current

E_AS

E_AR

Avalanche Energy

Single Pulsed

Repetitive

260

10.6

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

V/ns

R_θJA

T_J

Thermal resistance,Junction-to-Ambient

Junction Temperature

62.5

+150

℃/W

℃

T_OPR, Tstg

Operating and Storage Temperature

-55 to +150

℃

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3 4 5

中文翻译

下载PDF

与4N65F相关器件

型号	品牌	获取价格	描述	数据表
4N65G-E-K08-5060-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
4N65G-E-TF1-T	UTC	获取价格	Power Field-Effect Transistor,
4N65G-N-TMS-T	UTC	获取价格	Power Field-Effect Transistor
4N65G-T2Q-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TA3-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TF1-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TF2-T	UTC	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
4N65G-TF3-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TF3T-T	UTC	获取价格	Power Field-Effect Transistor,
4N65G-TM3-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET