Datasheet > 4N65G-TF2-T

4N65G-TF2-T

更新时间： 2024-02-11 11:19:34

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	247K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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4N65G-TF2-T 技术参数

UNISONIC TECHNOLOGIES CO., LTD

4N65-E

Power MOSFET

4A, 650V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N65-E is a high voltage power MOSFET

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristic. This power MOSFET is usually

used in high speed switching applications including power

supplies, PWM motor controls, high efficient DC to DC

converters and bridge circuits.



FEATURES

* R_DS(ON)< 2.5Ω @V_GS= 10 V

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness



SYMBOL

www.unisonic.com.tw

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型号	品牌	获取价格	描述	数据表
4N65G-TF3-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TF3T-T	UTC	获取价格	Power Field-Effect Transistor,
4N65G-TM3-T	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TMS2-T	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
4N65G-TMS4-T	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
4N65G-TMS-T	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
4N65G-TN3-R	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65G-TN3-T	UTC	获取价格	Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal
4N65G-TND-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
4N65G-TQ2-R	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET