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3SK212 PDF预览

3SK212

更新时间: 2024-09-17 21:14:55
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
5页 121K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET

3SK212 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
外壳连接:SOURCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:10 V最大漏极电流 (ID):0.05 A
FET 技术:METAL SEMICONDUCTOR最大反馈电容 (Crss):0.05 pF
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DUAL GATE, DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK212 数据手册

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Discrete