Datasheet > 3N163

3N163

更新时间： 2024-09-15 19:44:27

品牌	Logo	应用领域
MICROSS		开关晶体管
页数	文件大小	规格书
1页	360K
描述
TRANSISTOR 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, HERMETIC SEALED PACAKGE-4, FET General Purpose Small Signal

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3N163 数据手册

3N163

P-CHANNEL MOSFET

The 3N163 is an enhancement mode P-Channel Mosfet

FEATURES

The 3N163 is an enhancement mode P-Channel Mosfet

designed for use as a General Purpose amplifier or

switch

DIRECT REPLACEMENT FOR INTERSIL 3N163

ABSOLUTE MAXIMUM RATINGS¹

@ 25°C (unless otherwise noted)

The hermetically sealed TO-72 package is well suited

for high reliability and harsh environment applications.

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Drain Current

‐65°C to +200°C

‐55°C to +150°C

(See Packaging Information).

375mW

50mA

3N163 Features:

Very high Input Impedance

Low Capacitance

High Gain

High Gate Breakdown Voltage

Low Threshold Voltage

MAXIMUM VOLTAGES

Drain to Gate

‐40V

±125V

Drain to Source

Peak Gate to Source²

3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

I_GSSF

CHARACTERISTIC

Gate Forward Current

MIN

‐10

‐‐

‐40

‐2.0

‐3.0

‐‐

‐5.0

2000

TYP.

‐‐

MAX

‐‐

‐25

‐‐

UNITS

CONDITIONS

V_GS= ‐40V, V_DS= 0V

T_A= +125°C

BV_DSS

BV_SDS

V_GS(th)

Drain to Source Breakdown Voltage

Source‐Drain Breakdown Voltage

Gate to Source Threshold Voltage

I_D= ‐10µA, V_GS= 0V

I_S= ‐10µA, V_GD= 0V, V_BD= 0V

‐‐

‐5.0

‐6.5

200

400

250

‐30

4000

V_DS= V_GS, I_D= ‐10µA

V_DS= ‐15V, I_D= ‐10µA

V_DS= ‐15V, I_D= ‐0.5mA

V_DS= ‐15V, V_GS= 0V

V_DS= 15V, V_GS= V_DB= 0V

V_GS= ‐20V, I_D= ‐100µA

V_DS= ‐15V, V_GS= ‐10V

V_GS

I_DSS

I_SDS

r_DS(on)

I_D(on)

g_fs

Gate Source Voltage

Drain Leakage Current “Off”

Source Drain Current

Drain to Source “On” Resistance

Drain Current “On”

µS

Forward Transconductance

V_DS= ‐15V, I_D= ‐10mA , f = 1kHz

g_os

Output Admittance

‐‐

250

C_iss

C_rss

C_oss

Input Capacitance–Output shorted

Reverse Transfer Capacitance

Output Capacitance Input Shorted

‐‐

2.5

0.7

3.0

Click To Buy

V_DS= ‐15V, I_D= ‐10mA , f = 1MHz³

SWITCHING CHARACTERISTICS ‐ T_A= 25°C and V_BS= 0 unless otherwise noted

TIMING WAVEFORMS

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

Turn On Delay Time

Turn On Rise Time

Turn Off Time

MAX

UNITS

CONDITIONS

V_DD= ‐15V

_D(on)= ‐10mA

R_G= R_L= 1.4KΩ³

t_off

SWITCHING TEST CIRCUIT

Note 1 ‐ Absolute maximum ratings are limiting values above which 3N163 serviceability may be impaired.

Note 2 – Device must not be tested at ±125V more than once or longer than 300ms.

Note 3 – For design reference only, not 100% tested

Micross Components Europe

Available Packages:

TO-72 (Bottom View)

3N163 in TO-72

3N163 in bare die.

Tel: +44 1603 788967

Please contact Micross for full

package and die dimensions

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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与3N163相关器件

型号	品牌	获取价格	描述	数据表
3N163(TO-72)	MICROSS	获取价格	Transistor
3N163_TO-72	MICROSS	获取价格	P-CHANNEL MOSFET
3N163-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
3N163-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
3N163-4	Linear Systems	获取价格	P-CHANNEL ENHANCEMENT MODE
3N163-E3	VISHAY	获取价格	TRANSISTOR 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF, ROHS COMPLIANT, HER
3N163-SOT-143-4L	Linear	获取价格	Transistor,
3N163-TO-72-4L-ROHS	Linear	获取价格	Transistor,
3N164	CALOGIC	获取价格	P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
3N164	INTERSIL	获取价格	N-CHANNEL JFET

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