Datasheet > 2SK4103

2SK4103

更新时间： 2024-09-28 14:48:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	248K
描述
TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, PW-MOLD PACKAGE-3, FET General Purpose Power

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2SK4103 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.83	最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	5 A	最大漏源导通电阻：	1.5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK4103 数据手册

2SK4103

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

2SK4103

Switching Regulator Applications

Unit: mm

6.5 ± 0.2

5.2 ± 0. 2

0.6 MAX.

•

Low drain-source ON-resistance: R

= 1.35Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 2.8 S (typ.)

Low leakage current: I

= 100 μA (V

= 500 V)

DSS

Enhancement model: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

1.1 ± 0. 2

Absolute Maximum Ratings (Ta = 25°C)

0.8 MAX.

0.6 MAX.

1.05 MAX.

0.6 ± 0.15

Characteristic

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

2.3 ± 0.15 2.3 ± 0. 15

Drain current

1. GATE

2. DRAIN

Pulse (t = 1 ms)

(Note 1)

（HEAT SINK）

3. SOURSE

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

180

JEDEC

―

(Note 2)

Avalanche current

JEITA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-7J1B

150

Weight: 0.36 g (typ.)

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

3.125

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: = 90 V, T = 25°C (initial), L = 12.2 mH, I = 5 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2010-04-13

12 3 4 5 6

中文翻译

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与2SK4103相关器件

型号	品牌	获取价格	描述	数据表
2SK4104	TOSHIBA	获取价格	TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Genera
2SK4105	TOSHIBA	获取价格	TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, FET General Purp
2SK4107	TOSHIBA	获取价格	Switching Regulator Applications
2SK4107(F)	TOSHIBA	获取价格	2SK4107(F)
2SK4107_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK4108	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK4108(F,T)	TOSHIBA	获取价格	MOSFET N-CH 500V 20A SC-67
2SK4110	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Gener
2SK4111	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67,
2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General

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