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2SK3829

更新时间： 2024-09-16 04:26:31
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三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 42K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device

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中文翻译

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2SK3829 技术参数

生命周期：Transferred零件包装代码：TO-3PB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.38
Is Samacsys：N雪崩能效等级（Eas）：86 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：48 A最大漏极电流 (ID)：48 A
最大漏源导通电阻：0.041 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：65 W
最大脉冲漏极电流 (IDM)：192 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK3829 数据手册

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Ordering number : ENN8031  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3829  
Features  
• Low ON-resistance.  
•
•
•
•
Ultrahigh-speed switching.  
4V drive.  
Motor drive, DC / DC Converter.  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
60  
±20  
48  
DSS  
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
192  
2.5  
65  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
86  
48  
AS  
I
AV  
*1. V =20V, L=50µH, I =48A  
DD  
AV  
*2. L≤50µH, 1 Pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
60  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=60V, V =0  
GS  
1
±10  
2.6  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0  
DS  
V
(off)  
GS  
=10V, I =1mA  
1.2  
18  
D
Forward Transfer Admittance  
yfs  
=10V, I =24A  
30  
S
D
R
(on)1  
I
=24A, V =10V  
GS  
21  
29  
27.5  
41  
mΩ  
mΩ  
pF  
pF  
pF  
DS  
D
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
=24A, V =4V  
GS  
Input Capacitance  
Ciss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
1780  
266  
197  
DS  
DS  
DS  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Marking : K3829  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D2404QA TS IM TB-00000310  
No.8031-1/4  
1234

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