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2SK3740-ZK-AZ PDF预览

2SK3740-ZK-AZ

更新时间: 2024-11-07 13:00:47
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 169K
描述
Power Field-Effect Transistor, 20A I(D), 250V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, MP-25ZK, 3 PIN

2SK3740-ZK-AZ 技术参数

生命周期:Transferred零件包装代码:TO-263
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.37
雪崩能效等级(Eas):40 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3740-ZK-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3740  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3740 is N-channel MOS FET device that  
features a low on-state resistance and excellent  
switching characteristics, designed for high voltage  
applications such as lamp drive, DC/DC converter, and  
actuator driver.  
PART NUMBER  
PACKAGE  
2SK3740-ZK  
TO-263 (MP-25ZK)  
(TO-263)  
FEATURES  
Gate voltage rating: ±30 V  
Low on-state resistance  
RDS(on) = 160 mMAX. (VGS = 10 V, ID = 10 A)  
Low gate charge  
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)  
Surface mount package available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
±20  
±60  
1.5  
V
V
A
A
W
W
°C  
PT2  
Tch  
100  
150  
Storage Temperature  
Tstg  
IAS  
EAS  
–55 to +150  
°C  
A
mJ  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
20  
40  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 , VGS = 20 0 V, L = 100 µH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.25  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16913EJ1V0DS00 (1st edition)  
Date Published November 2003 NS CP(K)  
Printed in Japan  
2003  

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