Datasheet > 2SK3746_12

2SK3746_12

更新时间： 2022-05-17 02:58:46

品牌	Logo	应用领域
三洋 - SANYO		开关高压
页数	文件大小	规格书
7页	497K
描述
High-Voltage, High-Speed Switching Applications

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数据手册

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2SK3746_12 数据手册

2SK3746

Ordering number : EN8283A

SANYO Semiconductors

DATA SHEET

N-Channel Silicon MOSFET

High-Voltage, High-Speed Switching

Applications

2SK3746

Features

•

Low ON-resistance, low input capacitance, ultrahigh-speed switching

High reliability (Adoption of HVP process)

Avalanche resistance guarantee

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

1500

±20

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

2.5

110

150

Allowable Power Dissipation

Tc=25 C

Channel Temperature

Tch

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

1 V =50V, L=20mH, I =2A (Fig.1)

2 L 20mH, single pulse

≤

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: TO-3P-3L

7539-002

• JEITA, JEDEC : SC-65, TO-247, SOT-199

• Minimum Packing Quantity : 30 pcs./magazine

2SK3746-1E

4.8

15.6

Marking

Electrical Connection

7.0

1.5

3.2

K3746

LOT No.

13.6

2.0

3.0

1.0

0.6

1 : Gate

2 : Drain

3 : Source

5.45

SANYO : TO-3P-3L

http://semicon.sanyo.com/en/network

52312 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7

12 3 4 5 6 7

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